Ion-irradiation-induced defects in isotopically-labeled two layered graphene: enhanced in-situ annealing of the damage.
نویسندگان
چکیده
Contrary to theoretical estimates based on the conventional binary collision model, experimental results indicate that the number of defects in the lower layer of the bi-layer graphene sample is smaller than in the upper layer. This observation is explained by in situ self-annealing of the defects.
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ورودعنوان ژورنال:
- Advanced materials
دوره 25 7 شماره
صفحات -
تاریخ انتشار 2013